IR-910-350C1 infrared emitting diode 2.electrical & optical characteristics (ta=25 ?? ) symbol min typ max unit po 6.0 mw vf 1.3 1.6 v ir 100 ? a ? p 910 nm ?? 60 nm ?? 25 deg. tr ?| n s tf ?| n s cj 70 pf p/t -0.5 %/ ?? v/t -1.6 mv/ ?? ?@ anode ?a cathode features high-output power compact high reliability applications optical switches optical sensors medical application 1. absolute maximum ratings (ta=25 ?? ) symbol unit if ma ifp a vr v pd mw topr ?? tstg ?? tj ?? tls ?? *2:time 5 sec max,position:up to 3mm from the body temp. coefficient of vf peak wavelength spectral line half width half intensity beam angle rise time fall time junction capacitance temp. coefficient of po i t e m power output forward voltage reverse current ifp=50ma 1mhz ,v=0v if=10ma if=10ma if=20ma if=20ma if=20ma ifp=50ma conditions if=20ma if=20ma vr=5v i t e m forward current (dc) forward current (pulse)*1 reverse voltage power dissipation operating temp. storage temp. junction temp. 5 100 -20 to 85 -30 to 100 ratings dimensions (unit:mm) 60 0.5 100 260 lead soldering temp.*2 *1:tw=10us,t=10ms thermal derating curve 0 10 20 30 40 50 60 70 80 -30 0 30 60 90 ambient temperature(??) forward current(ma) forward i-v characteristics 0 10 20 30 40 50 60 70 80 0 1 2 3 forward voltage(v) forward current(ma) power output vs temperature if=10ma 0 20 40 60 80 100 120 140 -30 0 30 60 90 ambient temperature(??) relative power output(%) spectral output 0 20 40 60 80 100 120 800 900 1000 wavelength(nm) relative power output(%) radiation pattern 0 20 40 60 80 100 120 -90 -60 -30 0 30 60 90 beam angle(deg.) relative power output(%) relative power vs forward current 0 50 100 150 200 250 300 350 400 0 20 40 60 80 forward current(ma) relative power output(%) forward voltage vs temperature if=10ma 1 1.1 1.2 1.3 1.4 1.5 1.6 -30 0 30 60 90 ambient temperature(??) forward voltage(v) power light systems gmbh, kinzerallee 20, 12555 berlin, germany tel. +49(30)6501-7868 / fax +49(30)6501-7869, email: sales@led-eshop.de http://
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